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PDF SW2N70 Data sheet ( Hoja de datos )
| Número de pieza | SW2N70 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW2N70
Features
■ High ruggedness
■ RDS(ON) (Max 7 Ω)@VGS=10V
■ Gate Charge (Max 5nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
12
3
2
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
N-channel MOSFET
BVDSS : 700V
ID : 2A
RDS(ON) : 7ohm
2
1
3
Order Codes
Item Sales Type
1 SW I 2N70
2 SW D 2N70
Absolute maximum ratings
Marking
SW2N70
SW2N70
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Package
TO-251
TO-252
Packaging
TUBE
REEL
Value
700
2.0
1.3
8.0
± 30
140
2.8
4.5
28
0.22
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
RthCS
RthjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
40
62.5
Unit
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
1 page  
SAMWIN
SW2N70
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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| PDF Descargar | [ Datasheet SW2N70.PDF ] | |
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