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PDF SW75N08 Data sheet ( Hoja de datos )
| Número de pieza | SW75N08 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW75N08
N-channel TO-220 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 11m Ω)@VGS=10V
■ Gate Charge (Typ 74nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 80V
ID : 75A
RDS(ON) : 11mΩ
2
1
3
Order Codes
Item
1
Sales Type
SW P 75N08
Marking
SW 75N08
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
80
75*
47*
300
±30
890
160
5
227
1.8
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
0.55
0.5
56
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW75N08
Fig.12 . Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
5/5
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| PDF Descargar | [ Datasheet SW75N08.PDF ] | |
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