|
|
Datasheet 2N6290 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6290 | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeters
Electrical Characteristics (Ta=25oC)
Part #
Polarity VCBO VCEO VEBO (V) (V) (V)
Min Mi | RECTRON | transistor |
2 | 2N6290 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6288 2N6290 2N6292
DESCRIPTION ·With TO-220 package ·Complement to PNP type:
2N6107; 2N6109 ;2N6111
APPLICATIONS ·Power amplifier and switching
circuits applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;conn | Savantic | transistor |
3 | 2N6290 | NPN PLASTIC POWER TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
2N6290
2N6290 NPN PLASTIC POWER TRANSISTOR
Complementary 2N6109 Medium Power Switching and Linear Applications
N LH
BF
C E
A OO
12 3
K
D G
J M
All diminsions in mm.
PIN CONFI | CDIL | transistor |
4 | 2N6290 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for gen | Central Semiconductor | transistor |
5 | 2N6290 | POWER TRANSISTORS(7A/40W) A
A
A
A
| Mospec Semiconductor | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
Esta página es del resultado de búsqueda del 2N6290. Si pulsa el resultado de búsqueda de 2N6290 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |