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PDF MRF904 Data sheet ( Hoja de datos )
| Número de pieza | MRF904 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF904 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MRF904
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Storage Temperature
Symbol
v CEO
VCBO
Vebo
'C
PD
Tstg
Value
15
25
3.0
30
0.2
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 1.0 mAdc, Iq = 0)
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mAdc, Vce = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 15 mAdc, VC e = 10 Vdc, f = 1.0 GHz)
Collector-Base Capacitance
(Vcb = 10 vdc, Ei = o, f = 1.0 MHz)
Noise Figure
dC = 5.0 mAdc, V C E = 6.0 Vdc, f = 450 MHz)
C(l = 5.0 mAdc, Vce = 6.0 Vdc, f = 1.0 GHz)
FUNCTIONAL TEST
Maximum Available Power(1)
(lC = 5.0 mAdc, VC e = 6.0 Vdc, f = 450 MHz)
(lC = 5.0 mAdc, Vce = 6.0 Vdc, f = 1.0 GHz)
(1)G r
IS21I 2
(1 -|Siil 2 )(1 - Tsi^)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
fT
Ccb
NF
Gmax
15
25
3.0
—
30
—
—
-
-
Typ
Max
Unit
I
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 200 —
—4.0 GHz
— 1.0 PF
dB
-1.5
2.5
dB
-16
10
7-216
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF904.PDF ] | |
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