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PDF MRF912 Data sheet ( Hoja de datos )
| Número de pieza | MRF912 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF912 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Peak
Total Device Dissipation C« Tq = 75°C
Derate above 75°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
vCEO
VCBO
v EBO
ic
PD
T stg
Value
12
20
3.0
50
500
4.0
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
Symbol
R 0JC
Max
250
Unit
°C/W
MRF912
CASE 303-01, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS <TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, Ic = 0)
Collector Cutoff Current
(V CB = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 30 mAdc, Vce = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 30 mAdc, VC e = 10 Vdc, f = 1.0 GHz)
Collector-Base Capacitance
(VCB = 10 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Noise Figure
C(l = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
C(l = 5.0 mAdc, Vce = vd°1 <=. f = 2.0 GHz)
Power Gain at Optimum Noise Figure -
C(l = 5.0 mAdc, V C e = 10 Vd c, f = "1.0 GHz)
C(l = 5.0 mAdc, Vce = 10 vd C- f = 2.0 GHz)
Maximum Available Power Gain(1)
C(l = 30 mAdc, VC e = 10 Vdc, f = 1.0 GHz)
dC = 30 mAdc, VC E = 10 Vdc, f = 2.0 GHz)
(DG r
2
fell
7s^>]S11| 2 )(1 -
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hp£
j
It
Ccb
NF
Gnf
Gmax
12
20
3.0
—
30
-
—
-
-
14
Typ
-
—
—
—
—
5.0
0.6
2.5
4.0
12
7.0
16.5
11.0
Unit
|
- Vdc
— Vdc
— Vdc
50 nAdc
-200
- GHz
1.0 pF
dB
3.0
- dB
dB
-
7-225
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MRF912.PDF ] | |
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