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PDF MPF213 Data sheet ( Hoja de datos )
| Número de pieza | MPF213 | |
| Descripción | DUAL-GATE MOSFET VHF AMPLIFIER | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPF213 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
—Drain Current Continuous
Gate Current
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Total Device Dissipation (w Tq =. 25°C
Derate above 25°C
Lead Temperature, 1/16" From Seated
Surface for 10 Seconds
Junction Temperature Range
Storage Channel Temperature Range
Symbol
vDs
V DG1
V DG2
ID
'G1
!G2
Pd
Pd
TL
MPF211
MPF212 MPF213
27 35
35 40
35 40
50
±10
±10
300
1.71
1.2
8.0
260
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watt
mW'°C
°C
Tj
Tstg
- 65 to + 1 50
-65 to +150
°C
°C
MPF211
MPF212
MPF213
CASE 317-01, STYLE 1
DUAL-GATE MOSFET
VHF AMPLIFIER
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VqiS = VQ2S = -4.0 Vdc, Dl = 10^Adc)
MPF211.212
MPF213
Instantaneous Drain-Source Breakdown Voltage! 1)
(Vqis = VQ2S = -4.0 Vdc, Irj = 10 /xAdc)
Gate 1-Source Breakdown Voltage(2)
(VQ2S = VqS = 0. IG1 = ±1 mAdc)
Gate 2-Source Breakdown Voltage(2)
(VG1S = Vqs = 0, lG2 = ±10 mAdc)
Gate 1 Leakage Current
< V G1S = ±5.0 Vdc, VG 2S = V DS = 0)
< V G1S = -5.0 Vdc, VG2 s = V DS = 0, TA = 150°C)
Gate 2 Leakage Current
<VG2S = ±5.0 Vdc, VG1S = Vds = 0)
(VG2S
=
"
50
Vdc
-
VG1S
= VDs = 0, TA =
150°C)
Gate 1 to Source Cutoff Voltage
(Vds
=
15
Vdc
-
V G2S
=
40 Vd c- Id
=
2 -0 ^Adc)
Gate 2 to Source Cutoff Voltage
(Vds = 15 Vdc, VqiS = 0, Id = 20 /LiAdc)
ON CHARACTERISTICS
MPF21 1,212
MPF213
MPF21 1,213
MPF212
MPF211
MPF212.213
Zero-Gate-Voltage Drain Current(3)
(VDS = 15 Vdc, V G1S = 0, V G2 s = 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance(4)
(V D s = 15 Vdc, V G2 s = 4.0Vdc, V G is = 0, f = 1.0 kHz)
MPF211.212
MPF213
Reverse Transfer Capacitance
(Vds = 15 Vdc, V G2 S = 4.0 Vdc, Dl = 10 mAdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vdd = 18 Vdc, V GG = 7.0 Vdc, f = 200 MHz) (Figure 1)
(VpD = 24 Vdc, V GG = 6.0 Vdc, f = 45 MHz) (Figure 2)
MPF211
MPF211.213
Symbol
Min
V (BR)DSX
V (BR)DSX
v (BR)G1SO
v (BR)G2SO
25
30
27
35
±6.0
±6.0
-
-
-
-
!G1SS
±0.04(Typ)
!G2SS
±0.04(Typ)
v G1S(off)
v G2S(off)
-0.5
-0.5
-0.2
-0.2
±100
-100
±100
-100
-5.5
-4.0
-2.5
-4.0
toss 6.0 4.0
Vdc
Vdc
Vdc
Vdc
nAdc
yuAdc
nAdc
/tAdc
Vdc
Vdc
mAdc
!Yfsl
*-rss
17
15
0.005
40
35
0.05
mmhos
pF
4.0
4.5
6-159
1 page  
MPF211, MPF212, MPF213
—FIGURE 14 RELATIVE SMALL-SIGNAL POWER GAIN
versus
GAIN CONTROL GATE SUPPLY VOLTAGE
MPF211
-10
-20
-30
\
-Ml
Vqd = 18 V
-SO f = 200 MHz
C RCUITW FIGURE 1
-SO
-70
-«0
-4.0
-2.0
2.0 4.0 6.0 8.0
VGG(GC) - GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
—FIGURE 15 COMMON SOURCE SPOT NOISE FIGURE
versus
GAIN CONTROL GATE SUPPLY VOLTAGE
MPF211
9.0
8.0
1 70
= 6.0
a: 5.0
5 4.0
z
zu." 3.0
2.0
VdD = 18
CIRCUIT IN FIGURE 1
.,
•»:
-1.0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
VGG(GC). GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
—FIGURE 16 SMALL-SIGNAL COMMON-SOURCE
INSERTION POWER GAIN versus GAIN CONTROL
GATE SUPPLY VOLTAGE
MPF211,213
—FIGURE 17 OPTIMUM SPOT NOISE FIGURE
versus FREQUENCY
r30
20
\10 '
1
-10
-20
Js-30 -
VDD- 24 V
f = 45 WHz
CIRCU IT IN FIGURE 2
-4(1
-4.0
-2.0
2.0 4.0 6.0 8.0
VGG(GC) GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
30 50
100 200 300 400
t, FREQUENCY (MHz)
—FIGURE 18 INPUT/OUTPUT IMPEDANCE
VDS = 15V
VG2S = 4.0V
Ip = 15 mA
-,25
6-163
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MPF213.PDF ] | |
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