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PDF MPQ6842 Data sheet ( Hoja de datos )
| Número de pieza | MPQ6842 | |
| Descripción | Quad Complementary Pair Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair
Transistor
NPN/PNP Silicon
14 13 12 11 10 9 8
COMPLEMENTARY
1234567
TYPE B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
30
30
4.0
200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
500
4.0
900 mW
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
825
6.7
2400
19.2
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
151 250 °C/W
Effective, 4 Die
52
139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70 %
26 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
30
4.0
—
—
v v1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
MPQ6842
Voltage and current are
negative for PNP transistors
14
1
CASE 646–06, STYLE 1
TO–116
TYPE B
Typ Max Unit
Vdc
——
Vdc
——
Vdc
——
nAdc
— 50
nAdc
— 50
2–514
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPQ6842.PDF ] | |
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