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PDF MPSA14 Data sheet ( Hoja de datos )
| Número de pieza | MPSA14 | |
| Descripción | Darlington Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSA13/D
MPSA13
MPSA14 *
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
30 Vdc
30 Vdc
10 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, IB = 0)
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
Symbol
V(BR)CES
ICBO
IEBO
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
30 — Vdc
— 100 nAdc
— 100 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
MPSA13 MPSA14
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k
700
500
300 TA = 25°C
200
1.0 ms
TC = 25°C 100 µs
1.0 s
FIGURE A
tP
PP
PP
100
70
50
30
20
10
0.4
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.6 1.0 2.0
4.0 6.0 10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
t1
1/f
+ +DUTY CYCLE
t1 f
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MPSA14.PDF ] | |
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