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Datasheet 2N5322 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N5322 | Medium Power Transistors 2N5320 & 2N5322
Medium Power Transistors
Features:
• High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation.
• Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications.
2N5320 NPN 2N5322 PNP TO-39 Metal Can Package |  Multicomp | transistor |
| 2 | 2N5322 | Silicon Power Switching Transistor |  Solid State | transistor |
| 3 | 2N5322 | COMPLEMENTARY SILICON SWITCHING TRANSISTORS 2N5320 2N5321 NPN 2N5322 2N5323 PNP
COMPLEMENTARY SILICON SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier an |  Central Semiconductor | transistor |
| 4 | 2N5322 | SWITCHING TRANSISTOR 2N5322 2N5323
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage |  Motorola Semiconductors | transistor |
| 5 | 2N5322 | SILICON POWER SWITCHING TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN 2N5322, 2N5323 PNP
TO-39 Metal Can Package
Medium Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Vol |  CDIL | transistor |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
| 2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32  SSDI transistor | | |
| 4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
| 6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown  Semicoa Semiconductor data | | |
| 7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T  Microsemi Corporation transistor | |
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