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Datasheet BZX84C51 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX84C51 | Zener Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes
BZX84C2V4 | MCC | diode |
2 | BZX84C51 | SILIICON PLANAR VOLTAGE REGULATOR DIODE Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILIICON PLANAR VOLTAGE REGULATOR DIODE
3
2 1
3
Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE
12
BZX84C2V4 to 75V
SOT-23 Formed SMD Package
Low voltage general purpose voltage regulator diode
ABSOLUTE | CDIL | diode |
3 | BZX84C51 | Surface Mount Zener Diodes Surface Mount Zener Diodes
Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V
Mechanical Data: *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: M | WEITRON | diode |
4 | BZX84C51 | Zener Diode BZX84CXXX
Rev.F Mar.-2016
描述 / Descriptions SOT-23 塑封封装 稳压二极管。 Zener Diode in a SOT-23 Plastic Package. 特征 / Features 300mW 功耗,非常适合于自动化装配流程。 300mW power dissipation, Ideally Suited for Automated Assembly. 用途 / Applications 适用 | BLUE ROCKET ELECTRONICS | diode |
5 | BZX84C51 | SURFACE MOUNT SILICON ZENER DIODES BZX84C2V4 SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 to 75 Volt POWER
410 mWatt
FEATURES
• Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU dire | Pan Jit International | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS | ||
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS | ||
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS | ||
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS |
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Número de pieza | Descripción | Fabricantes | |
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