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PDF MPS2369 Data sheet ( Hoja de datos )

Número de pieza MPS2369
Descripción Switching Transistors
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No Preview Available ! MPS2369 Hoja de datos, Descripción, Manual

ON Semiconductort
Switching Transistors
NPN Silicon
MPS2369
MPS2369A*
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
TJ, Tstg
Value
15
40
40
4.5
200
625
5.0
–55 to +150
Symbol
RqJA
Max
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
Unit
°C/W
*ON Semiconductor Preferred Device
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS2369A
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
MPS2369,A
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MPS2369,A
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MPS2369,A
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 125°C)
MPS2369,A
ICBO
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
MPS2369,A
ICES
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Min
15
40
40
4.5
1
EMITTER
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
µAdc
— 0.4
— 30
— 0.4 µAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 2
1
Publication Order Number:
MPS2369/D

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