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Datasheet BCY70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCY70 | TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction Temperature R |  Motorola Semiconductors | transistor |
| 2 | BCY70 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BCY70 , 71, 72
TO-18 Metal Can Package
General Purpose Industrial Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
|  CDIL | transistor |
| 3 | BCY70 | GENERAL PURPOSE PNP SILICON TRANSISTOR BCY70 BCY71 BCY72
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
12.7 (0.500) 5.33 (0.210)
min.
4.32 (0.170)
GENERAL PURPOSE PNP SILICON TRANSISTOR
DESCRIPTION
The BCY70, BCY71 & BCY72 are silicon pl |  Seme LAB | transistor |
| 4 | BCY70 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D361
BCY70; BCY71 PNP general purpose transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES • Low cu |  NXP Semiconductors | transistor |
| 5 | BCY70 | GENERAL PURPOSE AMPLIFIERS This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
|  STMicroelectronics | amplifier |
BCY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCY30 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 2 | BCY30A | Bipolar PNP Device in a Hermetically sealed TO5 Metal Package
BCY30A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5. Seme LAB data | | |
| 3 | BCY31 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 4 | BCY31A | Bipolar PNP Device
BCY31A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5. Seme LAB data | | |
| 5 | BCY32 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 6 | BCY33 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 7 | BCY33A | Bipolar PNP Device
BCY33A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 32V
5. Seme LAB data | |
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