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Datasheet 2N4860 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4860 | N-Channel JFETs 2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
N-Channel JFETs
2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN
2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX
2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV 2N4861JANTXV
PRODUCT SUMMARY
Part N |  Vishay | data |
| 2 | 2N4860 | N-Channel Silicon Junction Field-Effect Transistor 01/99
B-15
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers ¥ Commutators ¥ Analog Switches
Absolute maximum ratings at TA = 25¡C 2N4856, 2N4857, 2N4858
Reverse Gate Source Voltage
– 40 V
Reverse Gate Drain Voltage
– 40 V
C |  InterFET | transistor |
| 3 | 2N4860 | JFET SWITCHING N-CHANNEL-DEPLETION |  Motorola Inc | data |
| 4 | 2N4860 | N-CHANNEL J-FET TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385 Devices 2N4856 2N4857 2N4858 2N4859 2N4860 2N4861 Qualified Level JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +250C unless otherwise noted) 2N4856 2N4859 Parameters / Test Conditions Symbol 2N4857 2N4860 2N4858 2N4861 Gate-Source Vo |  Microsemi Corporation | data |
| 5 | 2N4860 | N-Channel Metal Can JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel
Operati |  Taitron Components | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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