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Número de pieza | BSS52 | |
Descripción | DARLINGTON TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSS52 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCER
VCBO
VEBO
ic
PD
pd
Tj. T stg
Symbol
Rhjc
R^ja
BSS BSS BSS
50 51 52
45 60 80
45 60 80
60 80 100
5.0
1.0
0.8
5.3
5
28.6
-65 to +200
Max
35
220
Unit I
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BSS50
BSS51
BSS52
CASE 79, STYLE 1
TO-39 (TO-205AD)
DARLINGTON TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Cutoff Current
(VcB = 45 V, Ie = 0)
(Vcb = 60 V, Ie = 0)
(VCB = 80 V, IE = 0)
Emitter-Cutoff Current
(V EB = 4 V, Ic = 0)
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Ib = 0)
BSS50
BSS51
BSS52
BSS50
BSS51
BSS52
ICBO
lEBO
V(BR)CE0
Emitter-Base Breakdown Voltage
B(l = 100 uA, Ic = 0)
ON CHARACTERISTICS
DC Current Gain(1)
C(l = 150 mA, VCE = 1
(IC = 500 mA, VcE = 1
V)
V)
Base-Emitter Voltage(1)
C(l = 150 mA, VcE = 1
(lC = 500 mA, VcE = 1
V)
V)
V(BR)EB0
hFE
VBE(on)
Saturation Voltage(l)
(lC = 500 mA, Ib = 0.5 mA)
(lC = 500 mA, Ib = 0.5 mA)
dC = 1 A, IB = 1 mA)
(lC = 1 A, Ib = 1 mA)
dC = 1 A, Ib = 4 mA)
dC = 1 A, Ib = 4 mA)
BSS51
BSS51
BSS50-52
BSS50-52
VcE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lC = 500 mA, VcE = 5, f = 20 MHz)
n
Output Capacitance
(VCB
=
10 V,
IE =
0- f =
1
MHz
>
Cob
Turn On Time (Ic = 500 mA, IB 1 = ~lB2 0.5 mA)
Turn Off Time (Ic = 500 mA, lB1 = ->B2 = 0.5 mA)
ton
toff
(1) Pulse Test: Pulse Width = 300 us. Duty Cycle = 2%, unless otherwise specified.
45
60
80
1500
2000
1.4
1.5
Typ
400
1500
50
50
50
1.55
1.65
1.3
1.9
1.6
2.2
1.6
2.2
Unit
I
nA
nA
MHz
4-231
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BSS52.PDF ] |
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