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Número de pieza | BSS71 | |
Descripción | HIGH VOLTAGE TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector– Base Voltage
Emitter– Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
200 Vdc
200 Vdc
6.0 Vdc
0.5 Adc
0.5 Watts
2.86 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
14.3 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)(1)
Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
Collector Cutoff Current (VCB = 150 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = 150 Vdc, IB = 0)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 30 mAdc, VCE = 10 Vdc)(1)
Collector–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
hFE
VCE(sat)
VBE(sat)
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
Min
200
200
6.0
—
—
—
20
30
50
40
—
—
—
—
—
—
Order this document
by BSS71/D
BSS71
3
21
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 500 nAdc
— 50 nAdc
40 —
45 —
120 —
140 250
—
Vdc
0.15 0.3
0.25 0.4
0.35 0.5
Vdc
0.7 0.8
0.8 0.9
0.85 1.0
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BSS71.PDF ] |
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BSS71 | Trans GP BJT NPN 200V 0.5A 3-Pin TO-18 | New Jersey Semiconductor |
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