DataSheet.es    


PDF BSS71 Data sheet ( Hoja de datos )

Número de pieza BSS71
Descripción HIGH VOLTAGE TRANSISTOR
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BSS71 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! BSS71 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector– Base Voltage
Emitter– Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
200 Vdc
200 Vdc
6.0 Vdc
0.5 Adc
0.5 Watts
2.86 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
14.3 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)(1)
Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
Collector Cutoff Current (VCB = 150 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = 150 Vdc, IB = 0)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 30 mAdc, VCE = 10 Vdc)(1)
Collector–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
hFE
VCE(sat)
VBE(sat)
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
Min
200
200
6.0
20
30
50
40
Order this document
by BSS71/D
BSS71
3
21
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 500 nAdc
— 50 nAdc
40 —
45 —
120 —
140 250
Vdc
0.15 0.3
0.25 0.4
0.35 0.5
Vdc
0.7 0.8
0.8 0.9
0.85 1.0
1

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet BSS71.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BSS70SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORSETC
ETC
BSS70RSOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORSETC
ETC
BSS71Trans GP BJT NPN 200V 0.5A 3-Pin TO-18New Jersey Semiconductor
New Jersey Semiconductor
BSS71SILICON PLANAR EPITAXIAL NPN TRANSISTORTT
TT

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar