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PDF MUR1010CT Data sheet ( Hoja de datos )
| Número de pieza | MUR1010CT | |
| Descripción | SUPER FAST RECOVERY RECTIFIER | |
| Fabricantes | GOOD ELECTRONIC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR1010CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MUR1005CT THRU MUR1060CT
SUPER FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere
TO-220AB
FEATURES
0.419(10.66)MAX.
Ø 0.139(3.55)
MIN
0.054(1.39)
0.045(1.15)
0.196(5.0)
0.163(4.16)
◆ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
◆ Exceeds environmental of MIL-S-19500/228
◆ Low power loss, high efficiency.
◆ Low forward voltage, high current capability.
◆ High surge capability.
◆ Super fast recovery times, high voltage.
◆ Epitaxial chip construction.
◆ In compliance with EU RoHS 2002/95/EC directives.
Pin 1
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.1(2.54)
Typ.
0.025(0.65)
MAX
Dimensions in inches and (millimeters)
0.115(2.92)
0.080(2.03)
MECHANICAL DATA
Case: TO-220AB, Molded plastic.
Terminals: Solderable per MIL-STD-750，Method 2026
Weight: 1.859 gram (0.0655 ounces).
Standard Packaging : Tube.
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Recurrenent Peak Reverse Voltage
SYMBOLS MUR1005CT MUR1010CT MUR1020CT MUR1040CT MUR1060CT UNITS
VRRM
50
100 200 400 600 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 Volts
Maximum DC Breakdown Voltage
VDC
50
100 200 400 600 Volts
Maximum Average Forward Current at TC =100°C
Peak Forward Surge Current, 8.3ms single half sinewave
superimposed on rated olad(JEDEC methode)
Maximum Forward Voltage at 5A
Maximum DC Reverse Current at TJ=25°C Rated DC
Blocking Voltage TJ=100°C
Maximum Reverse Recovery Time (NOTE 2)
IF(AV)
IFSM
VF
IR
trr
10.0 Amp
125 Amps
0.95
1.30
1.70
Volts
1.0
500
µA
35 50 nS
Typical Junction Capacitance (NOTE 1)
CJ
62 pF
Typical Thermal Resistance
Rθ JC
3.0 °C/W
Operating and Storage Temperature Range
TSTG
-55 ～ +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Both Bonding and Chip structure are availiable.
GOOD ELECTRONIC CO., LTD
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR1010CT.PDF ] | |
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