Datasheet 2N6519 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6519	NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMB	CDIL	transistor
2	2N6519	High Voltage Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Collector – Emitter Voltage Co	Motorola Semiconductors	transistor
3	2N6519	High Voltage Transistors High Voltage Transistors MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VCEO 250 300 350 Vdc VCBO 250 300 350 Vdc VEBO Vdc 6.0 5.0 Base Current Collector Curr	ON Semiconductor	transistor
4	2N6519	COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier application	Central Semiconductor	transistor
5	2N6519	PNP EPITAXIAL SILICON TRANSISTOR	Samsung semiconductor	transistor

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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