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Número de pieza | BYQ30EX-200 | |
Descripción | Rectifier diodes ultrafast/ rugged | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30EX series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYQ30EX series is supplied in
the conventional leaded SOT186A
package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab isolated
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.95 V
IO(AV) = 16 A
IRRM ≤ 0.2 A
trr ≤ 25 ns
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BYQ30EX
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Average rectified output current square wave
(both diodes conducting)1
δ = 0.5; Ths ≤ 59 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Ths ≤ 59 ˚C
t = 10 ms
current per diode
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Storage temperature
Operating junction temperature
ESD LIMITING VALUE
-
-
-
-
-
-
-
-
-
-40
-
SYMBOL PARAMETER
VC Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
16
16
100
110
UNIT
V
V
V
A
A
A
A
0.2 A
0.2 A
150 ˚C
150 ˚C
MIN.
-
MAX.
8
UNIT
kV
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
1 page Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30EX series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BYQ30EX-200.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYQ30EX-200 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
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