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Datasheet 1N5235 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5235 | SILICON ZENER DIODES 1N5221-1N5281
High-reliability discrete products and engineering services since 1977
SILICON ZENER DIODES
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standar | Digitron Semiconductors | diode |
2 | 1N5235 | Small Signal Zener Diodes www.vishay.com
1N5221 to 1N5267
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
1.7 to 20
VZ specification
Thermal equilibrium
Int. construction
Single
UNIT V mA
FEATURES
• Silicon planar power Zener di | Vishay | diode |
3 | 1N5235 | Zener Diode, Rectifier 1N5225 THRU 1N5267
ZENER DIODES
FEATURES
DO-35
min. 1.083 (27.5)
♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request.
max. ∅.079 (2.0)
Cathode Mark
min. 1.083 (27.5)
♦ These diodes are also avai | General Semiconductor | diode |
4 | 1N5235 | SILICON 500 mW ZENER DIODES | Microsemi Corporation | diode |
5 | 1N5235 | ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1N5221B-LCC3 TOB-LCC 1N5281B-LCC3
MECHANICAL DATA Dimensions in mm (inches)
5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006)
0.64 ± 0.08 (0.025 ± 0.003)
0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002)
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SU | Seme LAB | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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