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PDF BSS87 Data sheet ( Hoja de datos )
| Número de pieza | BSS87 | |
| Descripción | N-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BSS87
200 V, N-channel vertical D-MOS transistor
9 December 2014
Product data sheet
1. General description
N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-
MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
• Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor
Logic (TTL) devices.
• Very fast switching
• No secondary breakdown
3. Applications
• Relay driver
• High-speed line driver
• Load-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 0.4 A; Tj = 25 °C
Min Typ Max Unit
- - 200 V
-20 -
20 V
[1] - - 0.4 A
-
1.6 3
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
BSS87
200 V, N-channel vertical D-MOS transistor
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
190 216 K/W
[2] -
105 125 K/W
[2] -
36 42 K/W
- 6 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103 aaa-014574
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
10 0.05
0.02
0.01
0
Fig. 4.
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS87
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
BSS87
200 V, N-channel vertical D-MOS transistor
12. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
DB
A
bp3
E
HE
wM B
12
bp1
e1
e
bp2
Lp
3
c
02
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
bp1 bp2 bp3
c
DE
e e1 HE Lp w
mm
1.6
1.4
0.48 0.53
0.35 0.40
1.8 0.44
1.4 0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
IEC
Fig. 18. Package outline SOT89
BSS87
Product data sheet
REFERENCES
JEDEC
JEITA
TO-243
SC-62
All information provided in this document is subject to legal disclaimers.
9 December 2014
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BSS87.PDF ] | |
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