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Número de pieza | BR2500 | |
Descripción | SILICON BRIDGE RECTIFIERS | |
Fabricantes | EIC discrete Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BR2500 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BR2500 - BR2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNITS
VRRM 50 100 200 400 600 800 1000 Volts
VRMS
35
70 140 280 420 560 700 Volts
VDC 50 100 200 400 600 800 1000 Volts
IF(AV)
25 Amps.
IFSM
I2 t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.45
- 40 to + 150
- 40 to + 150
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BR2500.PDF ] |
Número de pieza | Descripción | Fabricantes |
BR2500 | Bridge Rectifier | Formosa MS |
BR2500 | SILICON BRIDGE RECTIFIERS | EIC discrete Semiconductors |
BR2500 | Diode ( Rectifier ) | American Microsemiconductor |
BR25005 | (BR25005 - BR2510) SILICON BRIDGE RECTIFIERS | Galaxy Semi-Conductor |
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