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Datasheet BS223 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BS223 | DMOS Transistors (P-Channel) BS223
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No the |  General Semiconductor | transistor |
BS2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BS200 | Water Bath Instruction Manual Water Bath
Model
BS 200/400/600/660
Instruction Manual
- First Edition -
z Thank you for purchasing "Water Bath, BS Series" of Yamato Scientific Co., Ltd. z To use this unit properly, read this "Instruction Manual" thoroughly before using this unit. Keep this instruction manual around this unit f  Yamato data | | |
| 2 | BS208 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS208 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf  NXP Semiconductors transistor | | |
| 3 | BS208 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS208
P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
· · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets
E
A B
TO-92 Dim A B
C
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70 — 0.63 3.6  Diodes Incorporated transistor | | |
| 4 | BS208 | DMOS Transistors (P-Channel) BS208
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMO General Semiconductor transistor | | |
| 5 | BS209 | DMOS Transistors (P-Channel) BS209
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No the General Semiconductor transistor | | |
| 6 | BS2100F | 600V High voltage High & Low-side / Gate Driver 600V High voltage High & Low-side, Gate Driver
BS2100F
General Description The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in  ROHM Semiconductor driver | | |
| 7 | BS2101F | 600V High voltage High & Low-side / Gate Driver 600V High voltage High & Low-side, Gate Driver
BS2101F
General Description
The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t ROHM Semiconductor driver | | |
| 8 | BS2103F | 600V High voltage High & Low-side / Gate Driver 600V High voltage High & Low-side, Gate Driver
BS2103F
General Description The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t ROHM Semiconductor driver | | |
| 9 | BS2114F | 600V High voltage High & Low-side Gate Driver 600V High voltage High & Low-side, Gate Driver
BS2114F
General Description The BS2114F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t ROHM Semiconductor driver | |
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