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Datasheet BDY72 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDY72 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package BDY72
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
Bi |  Seme LAB | data |
| 2 | BDY72 | Trans GP BJT NPN 120V 3A 3-Pin(2+Tab) TO-66 |  New Jersey Semiconductor | data |
BDY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDY12 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 2 | BDY12-10 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 3 | BDY12-16 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 4 | BDY12-6 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 5 | BDY13 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 6 | BDY13-10 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 7 | BDY13-16 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | | |
| 8 | BDY13-6 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed
APPLICATIONS ·Designed for LF signal powe  Inchange Semiconductor transistor | | |
| 9 | BDY13-6 | NPN Silicon Planar Trnasistors Siemens Semiconductor Group data | |
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