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PDF HSDL-5420 Data sheet ( Hoja de datos )

Número de pieza HSDL-5420
Descripción High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package
Fabricantes Agilent(Hewlett-Packard) 
Logotipo Agilent(Hewlett-Packard) Logotipo



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No Preview Available ! HSDL-5420 Hoja de datos, Descripción, Manual

H
High-Performance IR Emitter
and IR PIN Photodiode in
Subminiature SMT Package
Technical Data
HSDL-44XX IR Emitter
Series
HSDL-54XX IR Detector
Series
Features
• Subminiature Flat Top and
Dome Package
Size – 2x2 mm
• IR Emitter
875 nm TS AlGaAs
Intensity – 17 mW/sr
Speed – 40 ns
• Wide Range of Drive
Currents
500 µA to 500 mA
• IR Detector
PIN Photodiode
High Sensitivity
Speed – 7.5 ns
• Flexible Lead
Configurations
Surface Mount or
Through Hole
Applications
• Short Distance IR Links
• IrDA Compatible
• Small Handheld Devices
Pagers
Industrial Handhelds
• Diffuse LANs
• Wireless Audio
Description
Flat Top Package
The HSDL-4400 Series of flat top
IR emitters use an untinted,
nondiffused, truncated lens to
provide a wide radiation pattern
that is useful for short distance
communication where alignment
of the emitter and detector is not
critical. The HSDL-5400 Series of
flat top IR detectors uses the
same truncated lens design as the
HSDL-4400 Series of IR emitters
with the added feature of a black
tint that acts as an optical filter to
reduce the effects of ambient
light, such as sun, incandescent
and fluorescent light from
interfering with the IR signal.
Dome Package
The HSDL-4420 Series of dome
IR emitters uses an untinted,
nondiffused lens to provide a 24
degree viewing angle with high
on-axis intensity. The HSDL-5420
Series of IR detectors uses the
same lens design as the HSDL-
4420 IR emitter and optical filter
used in the HSDL-5400 IR
detector.
Lead Configuration
All of these devices are made by
encapsulating LED and PIN
photodiode chips on axial lead
frames to form molded epoxy
subminiature packages. A variety
of lead configurations is available
and includes: surface mount gull
wing, yoke lead, or Z-bend and
through hole lead bends at 2.54
mm (0.100 inch) center spacing.
Technology
The subminiature solid state
emitters utilize a highly optimized
LED material, transparent sub-
strate aluminum gallium arsenide,
TS AlGaAs. This material has a
very high radiant efficiency,
capable of producing high light
output over a wide range of drive
currents and temperature.
4-68
5964-9018E

1 page




HSDL-5420 pdf
Package Dimensions
The following notes affect the
package outline drawings E
through I.
1. The pinout represents the
HSDL-54XX IR detectors
where the protruding support
tab is closest to the anode
lead. While the pinout is
reversed for the HSDL-44XX
IR emitters where the pro-
truding support tab is closest
to the cathode lead.
2. The protruding support tab of
the HSDL-54XX is connected
to the cathode lead. While the
protruding support tab of the
HSDL-44XX is connected to
the anode lead.
(E) Gull Wing Lead, Option 011
0.76 (0.030) MAX.
(F) “Yoke” Lead, Options 021
0.76 (0.030) MAX.
4-72
ALL DIMENSIONS ARE IN MILLIMETRES (INCHES)

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HSDL-5420 arduino
HSDL-44XX Absolute Maximum Ratings
Parameter
Symbol
Peak Forward Current (Duty Factor = 20%,
Pulse Width = 100 µs)
DC Forward Current
Power Dissipation
Reverse Voltage (IR = 100 µA)
Transient Forward Current (10 µs Pulse)
Operating Temperature
Storage Temperature
Junction Temperature
Lead Solder Temperature
[1.6 mm (0.063 in.) from body]
IFPK
IFDC
PDISS
VR
IFTR
TO
TS
TJ
Reflow Soldering Temperatures
Convection IR
Vapor Phase
Min.
5
-40
-55
Max.
500
100
180
1.0
85
100
110
260/5 s
Unit
mA
mA
mW
V
A
°C
°C
°C
°C
235/90 s
215/180 s
°C
°C
Ref.
Fig. 7, 8
Fig. 6
[1]
Notes:
1. The transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the LED die and
the wire bonds.
HSDL-44XX Electrical Characteristics at TA = 25°C
Parameter
Symbol Min. Typ. Max.
Forward Voltage
VF 1.30 1.50 1.70
1.40 1.67 1.85
2.15
Forward Voltage
Temperature Coefficient
VF/T
-2.1
-2.1
Series Resistance
Diode Capacitance
Reverse Voltage
Thermal Resistance,
Junction to Pin
RS 2.8
CO 40
VR 5 20
Rθjp 170
Unit
V
mV/ °C
pF
V
°C/W
Condition
IFDC = 50 mA
IFDC = 100 mA
IFPK = 250 mA
IFDC = 50 mA
IFDC = 100 mA
IFDC = 100 mA
0 V, 1 MHz
IR = 100 µA
Ref.
Fig. 2
Fig. 3
4-78

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