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PDF CXG1010N Data sheet ( Hoja de datos )
| Número de pieza | CXG1010N | |
| Descripción | Power Amplifier for PHS | |
| Fabricantes | Sony Corporation | |
| Logotipo |  |
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CXG1010N
Power Amplifier for PHS
For the availability of this product, please contact the sales office.
Description
The CXG1010N is a power amplifier for PHS. This
16 pin SSOP (Plastic)
IC is designed using the Sony’s GaAs J-FET process
and operates at a single power supply.
Features
• High output power
21.5 dBm
• Positive power supply drive VDD=3.4 V
• Low current consumption 200 mA
• High gain
40 dB Typ.
• Low distortion (ACP)
–59 dBc Typ.
• Small mold package 16-pin SSOP
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VDD
6
• Voltage between gate and source
Vgs0
1.5
• Drain current
IDD 500
• Power dissipation
PD
3
• Channel temperature Tch
175
• Operating temperature Top –35 to +85
• Storage temperature Tstg –65 to +150
V
V
mA
W
°C
°C
°C
Electrical Characteristics
VDD=3.4 V, VCTL=2.0 V, f=1.90 GHz
Item
∗1 Current consumption
∗1 Gate voltage adjustment value
Input VSWR
Output power (for –15.5 dBm input)
∗2 Power gain
∗2
∗3 Gain control
∗2 Average leak power level
(600 kHz±100 kHz)
∗2 Average leak power level
(900 kHz±100 kHz)
Symbol
IDD
VGG2
VSWRIN
POUT
GP
GCTL
PLEAK600
PLEAK900
Min.
0
21.5
37
Typ.
200
0.5
1.5
40
20
–59
–65
Max.
1.0
2.0
43
–54
–59
(Ta=25 °C)
Unit
mA
V
—
dBm
dB
dB
dBc
dBc
∗1 This value is adjusted by VGG1 and VGG2 set with Sony’s recommended current adjustment method when
21.5 dBm is output. In this time, the voltage ratio of VGG1 and VGG2 should match to the voltage ratio
generated by the resistance of the recommended gate bias circuit.
∗2 When 21.5 dBm is output.
∗3 GCTL=GP (VCTL 2.0 V)–GP (VCTL 0 V)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E95836-TE
1 page  
CXG1010N
Example of Representative Characteristics (Ta=25 °C)
Input/output characteristics (POUT/ACP)
VDD=3.4V, Vctl=2.0V,IDD=200mA@POUT=21.5dBm
25 –40
23
21 21.5dBm
–45
19
17
POUT
15 –50
13
11
–55
9
ACP
7
5 –60
–40 –35 –30 –25 –20 –15
PIN-Input power (dBm)
GAIN, ACP vs. IDD
Freq=1.9GHz, VDD=3.4V, Vctl=2.0V, POUT constant
45 –48
44 –49
43 –50
42
POUT=22dBm
41
40 POUT=21.5dBm
39
38
GAIN
–51
–52
POUT=21.5dBm
–53
–54
POUT=22dBm –55
37 –56
36 –57
35 –58
34 –59
33
ACP
–60
32 –61
31 –62
30 –63
140 150 160 170 180 190 200 210 220 230 240 250 260
IDD-Current consumption (mA)
POUT, ACP vs. VDD
Frequency=1.9 GHz, Vctl=2.0 V, PINVGG2 constant
(IDD=200mA@VDD=3.4V)
24 –50
–51
23
22
POUT=22dBm
@VDD=3.4V
21
POUT
POUT=21.5dBm
@VDD=3.4V
POUT=22dBm
@VDD=3.4V
–52
–53
–54
–55
–56
ACP
–57
20 –58
POUT=21.5dBm
@VDD=3.4V
–59
19 –60
2 3 45 2
VDD-Drain voltage (V)
—5—
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CXG1010N.PDF ] | |
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