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PDF 2SJ363 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ363 | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
1 page  
Typical Capacitance vs.
Drain to Source Voltage
500
200
100
Coss
VGS = 0
f = 1 MHz
50
20
10
5
Ciss
2
1
0.5 Crss
0.2
0.1
0
–10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
2SJ363
Switching Characteristics
100
50 t d(off)
20 t f
10
tr
5 V GS = –10 V
PW = 50 µs, duty < 1 %
2 t d(on)
1
–0.05 –0.1 –0.2
–0.5 –1
–2
Drain Current I D (A)
–5
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
–3 –10 V
–2 –5 V
–1
VGS = 0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V SD (V)
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SJ363.PDF ] | |
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