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PDF 2SJ505S Data sheet ( Hoja de datos )
| Número de pieza | 2SJ505S | |
| Descripción | Silicon P Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ505S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.017Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-547
Target specification 1st. Edition
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
Pulse Test
–1.6
–1.2
–0.8
ID = –50 A
–0.4
–5 A
–20 A
–10 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ505(L), 2SJ505(S)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
VGS = –4 V
20
10
–10 V
5
2
Pulse Test
1
–1 –3 –10 –30 –100 –300 –1000
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
I D = –50 A
–20 A
VGS = –4 V
30
–50 A
–10 A
20 –10,–20A
10 VGS = –10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
100 Drain Current
30 Tc = –25 °C
25 °C
10
3 75 °C
1
0.3 V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SJ505S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SJ505 | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
| 2SJ505L | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
| 2SJ505S | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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