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PDF 2SJ506S Data sheet ( Hoja de datos )
| Número de pieza | 2SJ506S | |
| Descripción | Silicon P Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
RDS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
Pulse Test
–1.6
–1.2
–0.8
ID = –10 A
–0.4 –5 A
–2 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ506(L), 2SJ506(S)
Static Drain to Source on State Resistance
1000
vs. Drain Current
500
200
VGS = –4 V
100
50
–10 V
20
10
–1 –2
Pulse Test
–5 –10 –20 –50 –100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
–5 A
I D = –10 A
160
VGS = –4 V
120
–2 A
–10 A
80
40 VGS = –10 V
–2,–5 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
100 Drain Current
50
20
Tc = –25 °C
10
5 25 °C
2 75 °C
1
0.5
–0.1–0.2 –0.5 –1 –2
V DS = –10 V
Pulse Test
–5 –10 –20 –50
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SJ506S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SJ506 | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
| 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
| 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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