(PDF) 2SK1666 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1666
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1666 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Low voltage drive device  Can be driven from 4 V • Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1.2 0.8 30 A 0.4 20 A ID = 10 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1666 Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 Pulse Test 0.1 0.05 0.02 VGS = 4 V VGS = 10 V 0.01 0.005 2 5 10 20 50 100 200 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0.06 0.04 ID = 30 A 20 A 0.02 VGS = 4 V VGS = 10 V 10 A 30 A 10 A, 20 A 0 –40 0 40 80 120 160 Case Temperature TC (°C) Forward Transfer Admittance vs. Drain Current 100 Ta = –25°C 50 20 10 5 2 1 0.5 25°C 75°C Pulse Test VDS = 10 V 1 25 10 20 Drain Current ID (A) 50 5 5 Page

Páginas	Total 9 Páginas
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PDF 2SK1666 Data sheet ( Hoja de datos )