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Datasheet 2SK223 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SK223 | N-Channel Junction Silicon FET Ordering number:EN659K
N-Channel Junction Silicon FET
2SK223
High Voltage Driver Applications
Features
· Ultrahigh withstand voltage (VGDS≥–80V). · Due to low gate leakage currents even at high
voltage, the 2SK223 is suitable for a wide range of
application (IGDL=1nA/VDS=50V, ID=1mA). · Hig |  Sanyo Semicon Device | mosfet |
| 2 | 2SK2231 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 2SK2231
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2231
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.12 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.0 |  Toshiba Semiconductor | converter |
| 3 | 2SK2232 | Silicon N Channel MOS Type Field Effect Transistor 2SK2232
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2232
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 16 | Toshiba Semiconductor | transistor |
| 4 | 2SK2233 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 2SK2233
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV)
2
2SK2233
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) | Toshiba Semiconductor | converter |
| 5 | 2SK2234 | MOS Field Effect Power Transistor |  NEC | transistor |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu  Panasonic Semiconductor mosfet | | |
| 2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
| 3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
| 4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
| 5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
| 6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
| 7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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