(PDF) 2SK2958S Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK2958S
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-568B (Z) 3rd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SK2958(L),2SK2958(S) 1000 500 Body–Drain Diode Reverse Recovery Time 200 100 50 20 di / dt = 50 A / µs 10 0.1 0.3 VGS = 0, Ta = 25 °C 1 3 10 30 100 Reverse Drain Current I DR (A) 100000 Typical Capacitance vs. Drain to Source Voltage 30000 10000 3000 Ciss Coss 1000 Crss 300 VGS = 0 f = 1 MHz 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 75 A 40 VGS 30 VDS 20 VDD = 5 V 10 V 25 V 20 16 12 8 10 VDD = 25 V 10 V 4 5V 0 0 80 160 240 320 400 Gate Charge Qg (nc) 5000 2000 1000 500 200 100 50 Switching Characteristics VGS = 10 V, V DD = 10 V PW = 5 µs, duty < 1 % t d(off) tf tr t d(on) 20 10 5 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) 5 5 Page

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PDF 2SK2958S Data sheet ( Hoja de datos )