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PDF 2SK3019 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3019 | |
| Descripción | 2.5V Drive Nch MOS FET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3019 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Transistor
2.5V Drive Nch MOS FET
2SK3019
2SK3019
zStructure
Silicon N-channel
MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SK3019
Taping
TL
3000
zDimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(1)Source
(2)Gate
(3)Drain
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
Abbreviated symbol : KN
zEquivalent circuit
Gate
Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
Total power dissipation
ID
IDP∗1
PD∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Limits
30
±20
±100
±400
150
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Symbol
Rth(ch-a) ∗
Limits
833
Unit
V
V
mA
mA
mW
°C
°C
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Unit
°C / W
Rev.C
1/3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3019.PDF ] | |
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