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Número de pieza | 2SK3362 | |
Descripción | N-CHANNEL SILICON POWER MOSFET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK3362 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2SK3362-01 FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-220AB
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID[puls]
VGS
EAV
PD
Tch
Tstg
Rating
60
Unit Remarks
V
±50 A
±200
A
±20 V
867 mJ *1
80 W
+150
-55 to +150
°C
°C
*1 L=0.463mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V VGS=0V
VGS=±20V VDS=0V
ID=40A VGS=10V
ID=40A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=75A
VGS=10V
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
L=100µH Tch=25°C
IF=160A VGS=0V Tch=25°C
IF=80A
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
60 V
1.0 1.5
2.0 V
10 500 µA
0.2 1.0 mA
10 100
12 17
7.5 10
25 55
3500 5250
1250 1870
360 540
15 23
nA
mΩ
mΩ
S
pF
75 120
190 285 ns
110 165
50 A
1.15
1.65 V
75 120 ns
0.17
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max.
1.56
75.0
Units
°C/W
°C/W
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SK3362.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK3360 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
2SK3361 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
2SK3362 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
2SK3362-01 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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