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PDF 2SK3679 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3679 | |
| Descripción | Fuji Power MOSFET SuperFAP-G series Target Specification | |
| Fabricantes | Fuji Electric | |
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PRELIMINARY
2SK3679-01MR (900V/1.58Ω/9A)
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
VDS
ID
ID(pulse)
VGS
IAR
EAS
dVDS/dt
900
±9
±36
±30
9
287.7
20
Peak Diode recovery dV/dt
dV/dt
5
Maximum Power Dissipation
Operating and Storage
Temperature range
PD c=25
PD @Ta=25
Tch
Tstg
95
2.16
150
-55 +150
Units
V
A
A
V
A
mJ
kV/us
kV/us
W
W
*1
*2
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min.
Drain-Source Breakdown Voltage BVDSS
Gate Threshold Voltage
VGS(th)
Zero Gate Voltage Drain Current IDSS
Gate-Source Leakage Current IGSS
ID=250uA
ID=250uA
VDS=900V
VGS=0V
VGS=±30V
VGS=0V
VDS=VGS
Tch=25
Tch=125
VDS=0V
900
3.0
---
---
---
Drain-Source On-State Resistance RDS(on) ID=4.5A
VGS=10V ---
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
Ciss
Coss
Crss
Qg
Qgs
Qgd
IAV
VSD
VDS=25V
VGS=0V
f=1MHz
Vcc=450V
ID=9A
VGS=10V
L=6.51mH Tch=25
IF=9A,VGS=0V,Tch=25
---
---
---
---
---
---
12
---
typ.
---
---
---
---
---
---
1200
140
7
32
7
7
---
1.0
max.
---
5.0
25
250
100
1.58
---
---
---
---
---
---
---
1.5
Units
V
V
A
A
nA
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min. typ. max. Units
1.316 /W
58.0 /W
*1 L=6.51mH,Vcc=90V
F≤ D
µ
≤ DSS ≤ °
DRAWN
CHECKED
REVISIONS
MA4LE
DATE
NAME APPROVED
Fuji Electric Co.,Ltd.
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SK3679.PDF ] | |
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