Datasheet EMDC-10-1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	EMDC-10-1	E-Series Coupler 5 - 1000 MHz E-Series Coupler 5 - 1000 MHz Features q q EMDC-10-1 V3.00 SM-22 0.050 (1.27) 1 5 - 1000 MHz Nominal 10 ±0.9 dB Typical 1.1 dB 1.0 dB 1.2 dB Typical 20 dB 19 dB 17 dB Typical 17 dB Flatness 0.8 dB Maximum 1.6 dB 1.4 dB 2.3 dB Minimum 17 dB 15 dB 10 dB Minimum 14 dB 5 0.040 (1.02) 0.010 (0.25) 0.1	Tyco Electronics	data
2	EMDC-10-1-75	E-Series Coupler 5 - 1000 MHz E-Series Coupler 5 - 1000 MHz Features q q EMDC-10-1-75 V3.00 SM-22 0.050 (1.27) 1 5 - 1000 MHz Nominal 10 ±1.1 dB Typical 1.5 dB 1.3 dB 1.4 dB Typical 22 dB 20 dB 12 dB Typical 16 dB Flatness 1 dB Maximum 1.9 dB 1.7 dB 1.9 dB Minimum 19 dB 13 dB 6 dB Minimum 11 dB 5 0.040 (1.02) 0.010 (0.25) 0.1	Tyco Electronics	data
3	EMDC-10-1-75TR	E-Series Coupler 5 - 1000 MHz E-Series Coupler 5 - 1000 MHz Features q q EMDC-10-1-75 V3.00 SM-22 0.050 (1.27) 1 5 - 1000 MHz Nominal 10 ±1.1 dB Typical 1.5 dB 1.3 dB 1.4 dB Typical 22 dB 20 dB 12 dB Typical 16 dB Flatness 1 dB Maximum 1.9 dB 1.7 dB 1.9 dB Minimum 19 dB 13 dB 6 dB Minimum 11 dB 5 0.040 (1.02) 0.010 (0.25) 0.1	Tyco Electronics	data
4	EMDC-10-1TR	E-Series Coupler 5 - 1000 MHz E-Series Coupler 5 - 1000 MHz Features q q EMDC-10-1 V3.00 SM-22 0.050 (1.27) 1 5 - 1000 MHz Nominal 10 ±0.9 dB Typical 1.1 dB 1.0 dB 1.2 dB Typical 20 dB 19 dB 17 dB Typical 17 dB Flatness 0.8 dB Maximum 1.6 dB 1.4 dB 2.3 dB Minimum 17 dB 15 dB 10 dB Minimum 14 dB 5 0.040 (1.02) 0.010 (0.25) 0.1	Tyco Electronics	data

EMD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	EMD02N06E	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.1mΩ ID 191A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless	Excelliance MOS	transistor
2	EMD02N60A	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID UIS, 100% Tested 2A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis	Excelliance MOS	transistor
3	EMD02N60AK	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi	Excelliance MOS	transistor
4	EMD02N60CS	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi	Excelliance MOS	transistor
5	EMD02N60CSK	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi	Excelliance MOS	transistor
6	EMD02N60F	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi	Excelliance MOS	transistor
7	EMD02N70CS	Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 6Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise	Excelliance MOS	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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