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Datasheet FQI14N15 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FQI14N15 | 150V N-Channel MOSFET
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|  Fairchild Semiconductor | mosfet |
FQI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FQI10N20 | 200V N-Channel MOSFET
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Fairchild Semiconductor mosfet | | |
| 2 | FQI10N20C | 200V N-Channel MOSFET FQB10N20C/FQI10N20C
QFET
FQB10N20C/FQI10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-s Fairchild Semiconductor mosfet | | |
| 3 | FQI10N20L | 200V LOGIC N-Channel MOSFET FQB10N20L / FQI10N20L
December 2000
QFET
FQB10N20L / FQI10N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailor Fairchild Semiconductor mosfet | | |
| 4 | FQI10N60C | 600V N-Channel MOSFET FQB10N60C / FQI10N60C
QFET
FQB10N60C / FQI10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize Fairchild Semiconductor mosfet | | |
| 5 | FQI11N40 | 400V N-Channel MOSFET FQB11N40 / FQI11N40
November 2001
FQB11N40 / FQI11N40
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min Fairchild Semiconductor mosfet | | |
| 6 | FQI11N40C | 400V N-Channel MOSFET FQB11N40C/FQI11N40C
QFET
www.datasheet4u.com
®
FQB11N40C/FQI11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially Fairchild Semiconductor mosfet | | |
| 7 | FQI11P06 | 60V P-Channel MOSFET FQB11P06 / FQI11P06
May 2001
QFET
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini Fairchild Semiconductor mosfet | | |
| 8 | FQI12N20L | 200V LOGIC N-Channel MOSFET FQB12N20L / FQI12N20L
February 2001
FQB12N20L / FQI12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailo Fairchild Semiconductor mosfet | | |
| 9 | FQI12N50 | 500V N-Channel MOSFET FQB12N50 / FQI12N50
QFET
FQB12N50 / FQI12N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-s Fairchild Semiconductor mosfet | |
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