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Datasheet 2SD2136 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD2136 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD2136
3A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satis |  SeCoS | transistor |
| 2 | 2SD2136 | NPN Transistor RoHS 2SD2136
2SD2136 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
1.25 W (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
3A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
IC |  WEJ | transistor |
| 3 | 2SD2136 | Silicon NPN triple diffusion planar type Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1416
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
2.5±0.1
• High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) � |  Panasonic Semiconductor | transistor |
| 4 | 2SD2136 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD2136
NPN SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power application.
FEATURES
* High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * All |  Unisonic Technologies | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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