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PDF 2SD2138 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2138 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1418 and 2SB1418A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD2138
base voltage 2SD2138A
VCBO
60
80
Collector to 2SD2138
emitter voltage 2SD2138A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
4
2
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
Unit: mm
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2138
current
2SD2138A
Collector cutoff
2SD2138
current
2SD2138A
Emitter cutoff current
Collector to emitter 2SD2138
voltage
2SD2138A
ICBO
ICEO
IEBO
VCEO
VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
toff
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
E
min
60
80
1000
2000
typ max Unit
100
µA
100
100
µA
100
100 µA
V
10000
2.8 V
2.5 V
20 MHz
0.4 µs
4 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2138.PDF ] | |
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