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PDF 2SD2179 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2179 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD2179 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1446
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Complementary pair with 2SB1446.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
7A
Collector current
IC
5A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
*1 Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
50 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 500mA*2
VCE = 2V, IC = 2.5A*2
IC = 2A, IB = 100mA*2
IC = 2A, IB = 100mA*2
50
5
120 340
60
0.19 0.3
0.85 1.2
V
V
V
V
Transition frequency
fT VCB = 10V, IE = –50mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
60 70 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 120 ~ 240 170 ~ 340
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2179.PDF ] | |
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