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PDF 2SD2206 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2206 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD2206 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
100
8
2
3
0.5
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
http://store.iiic.cc/
2009-12-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD2206.PDF ] | |
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