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PDF 2SD2257 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2257 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD2257 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2257
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SD2257
Unit: mm
• High DC current gain: hFE = 2000 (min)
• Low saturation voltage: VCE (sat) = 1.5 V (max)
• Complementary to 2SB1495
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
100
8
±3
±5
0.3
2.0
20
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
≈ 800 Ω
Emitter
1 2006-11-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD2257.PDF ] | |
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