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Número de pieza | K9F6408U0A-TCB0 | |
Descripción | 8M x 8 Bit NAND Flash Memory | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
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No Preview Available ! K9F6408Q0C
K9F6408U0C
Document Title
8M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
0.1 1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. Package part number is modified.
K9F6408U0C-Y ---> K9F6408U0C_T
3. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
0.2 1. TBGA package is changed.
- 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA
2. Part number(TBGA package part number) is changed
- K9F6408Q0C-D ----> K9F6408Q0C-B
- K9F6408U0C-D -----> K9F6408U0C-B
3. K9F6408U0C-BCB0,BIB0 products are added
Draft Date
Jul. 24 . 2001
Nov. 5 . 2001
Nov. 12 . 2001
0.3 1. WSOP1 package is added.
- Part number : K9F6408U0C_VCB0,VIBO
Mar. 13 . 2002
0.4
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28)
Nov. 21. 2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 29)
0.5 The min. Vcc value 1.8V devices is changed.
K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 05. 2003
0.6 Pb-free Package is added.
K9F6408U0C-QCB0,QIB0
K9F6408U0C-HCB0,HIB0
K9F6408Q0C-HCB0,HIB0
K9F6408U0C-FCB0,FIB0
Mar. 13 . 2003
0.7 Note is added.
Jul. 04. 2003
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
0.8 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
Apr. 24. 2004
0.9 1. PKG(WSOP1) Dimension Change
May. 24. 2004
Remark
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
1
1 page K9F6408Q0C
K9F6408U0C
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F6408U0C-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
#1
0.70 MAX
0.58±0.04
#48
#24 #25
(0.01Min)
17.00±0.20
5
0.45~0.75
5 Page K9F6408Q0C
K9F6408U0C
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
K9F6408Q0C
Min Max
0-
10 -
0-
10 -
25(1)
-
0-
10 -
20 -
10 -
50 -
15 -
K9F6408U0C
Min Max
0-
10 -
0-
10 -
25(1)
-
0-
10 -
20 -
10 -
50 -
15 -
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC Characteristics for Operation
Parameter
Symbol
Data Transfer from Cell to Register
ALE to RE Delay( ID read )
ALE to RE Delay(Read cycle)
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
CE Access Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Last RE High to Busy
(at sequential read)
K9F6408U0C-
T,Q,V,F only
CE High to Ready(in case of inter-
ception by CE at read)
CE High Hold Time(at the last
serial read)(2)
tR
tAR1
tAR2
tCLR
tRR
tRP
tWB
tRC
tCEA
tREA
tRHZ
tCHZ
tOH
tREH
tIR
tWHR
tRST
tRB
tCRY
tCEH
K9F6408Q0C
Min Max
- 10
20 -
50 -
50 -
20 -
25 -
- 100
50 -
- 45
- 35
- 30
- 20
15 -
15 -
0-
60 -
- 5/10/500(1)
- 100
- 50 +tr(R/B)(3)
100 -
NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
K9F6408U0C
Min Max
- 10
20 -
50 -
50 -
20 -
25 -
- 100
50 -
- 45
- 35
- 30
- 20
15 -
15 -
0-
60 -
- 5/10/500(1)
- 100
50 +tr(R/
- B)(3)
100 -
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
11
11 Page |
Páginas | Total 29 Páginas | |
PDF Descargar | [ Datasheet K9F6408U0A-TCB0.PDF ] |
Número de pieza | Descripción | Fabricantes |
K9F6408U0A-TCB0 | 8M x 8 Bit NAND Flash Memory | Samsung semiconductor |
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