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PDF SM5010BN2S Data sheet ( Hoja de datos )
| Número de pieza | SM5010BN2S | |
| Descripción | Crystal Oscillator Module ICs | |
| Fabricantes | Nippon Precision Circuits Inc | |
| Logotipo |  |
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NIPPON PRECISION CIRCUITS INC.
SM5010 series
Crystal Oscillator Module ICs
OVERVIEW
The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits.
High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to
make a stable fundamental-harmonic oscillator.
FEATURES
I Inverter amplifier feedback resistor built-in
I Capacitors CG, CD built-in
I Standby function
I Power-save pull-up resistor built-in (5010CL×)
I 16 mA (VDD = 4.5 V) drive capability
(5010AN×, AK×, BN×, BK×, CL×, DN×)
I 4 mA (VDD = 4.5 V) drive capability
(5010AH×, BH×)
SERIES CONFIGURATION
I Output three-state function
I 2.7 to 5.5 V supply voltage
I Oscillator frequency output (fO, fO/2, fO/4, fO/8
determined by internal connection)
I 8-pin SOP (SM5010×××S)
I Chip form (CF5010×××)
Version1
3V operating
5V operating
Built-in
capacitance
Output
frequency
Output
load
(max)
[pF]
Recommended
operating
frequency
range [MHz]
Output
load
(max)
[pF]
Recommended
operating
frequency
range [MHz]
Output
current
[mA]
RD
[Ω]
CG
CD
Input
level
(5V)
Output
duty level
Standby
function
[pF] [pF]
SM5010AN1S
fO
15
30
50
30
16 –
TTL CMOS
No
S M 5 0 1 0 A N 2 S fO /2
15
30
50
30
16 –
TTL CMOS/TTL No
S M 5 0 1 0 A N 3 S fO /4
15
30
50
30
16 –
TTL CMOS/TTL No
S M 5 0 1 0 A N 4 S fO /8
15
30
50
30
16 –
TTL CMOS/TTL No
SM5010AK1S
fO
–
– 15 30 16 –
TTL TTL
No
SM5010AH1S
fO
15
16
15
30
4–
TTL CMOS
No
S M 5 0 1 0 A H 2 S fO /2
15
16
15
30
4–
TTL CMOS
No
S M 5 0 1 0 A H 3 S fO /4
15
16
15
30
4–
TTL CMOS
No
S M 5 0 1 0 A H 4 S fO /8
15
16
15
30
4–
TTL CMOS
No
SM5010BN1S
fO
15
30
50
30
16 820
TTL CMOS
No
S M 5 0 1 0 B N 2 S fO /2
15
30
50
30
16 820
TTL CMOS/TTL No
T B DS M 5 0 1 0 B N 3 S fO /4
15
30
50
30
16 820
TTL CMOS/TTL No
S M 5 0 1 0 B N 4 S fO /8
15
30
50
30
16 820
TTL CMOS/TTL No
SM5010BK1S
fO
–
– 15 30 16 820
TTL TTL
No
SM5010BH1S
fO
15
16
15
30
4 820
TTL CMOS
No
S M 5 0 1 0 B H 2 S fO /2
15
16
15
30
4 820
TTL CMOS
No
S M 5 0 1 0 B H 3 S fO /4
15
16
15
30
4 820
TTL CMOS
No
S M 5 0 1 0 B H 4 S fO /8
15
16
15
30
4 820
TTL CMOS
No
SM5010CL1S
fO
15
30
50
30
16 –
CMOS CMOS
Yes
S M 5 0 1 0 C L 2 S fO /2
15
30
50
30
16 –
CMOS CMOS
Yes
S M 5 0 1 0 C L 3 S fO /4
15
30
50
30
16 –
CMOS CMOS
Yes
S M 5 0 1 0 C L 4 S fO /8
15
30
50
30
16 –
CMOS CMOS
Yes
SM5010DN1S
fO
15
30
50
30
16 820
TTL CMOS
No
1. Chip form devices have designation CF5010×××.
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.
NIPPON PRECISION CIRCUITS—1
1 page  
SM5010 series
Electrical Characteristics
5010×N× series
3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
HIGH-level output voltage
L OW -level output voltage
Output leakage current
HIGH-level input voltage
L OW -level input voltage
V O H Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A
V O L Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A
IZ
Q: Measurement cct 2, INH = L OW , V DD = 3.6 V, VO H = V DD
Q: Measurement cct 2, INH = L OW , V DD = 3.6 V, VOL = V SS
VIH INH
VIL INH
5010×N 1
2.1 2.4
–V
– 0.3 0.4 V
– – 10
µA
– – 10
2.0 –
–V
– – 0.5 V
Current consumption
ID D
Measurement cct 3, load cct 1,
I N H = open, CL = 15 p F, f = 30 M H z
5010×N 2
5010×N 3
TBD mA
5010×N 4
INH pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
RUP1 Measurement cct 4
Rf Measurement cct 5
RD Design value
5 0 1 0 B ××
– 100 – kΩ
– 200 – kΩ
– 820 – Ω
Built-in capacitance
CG
CD
Design value, determined by the internal
w afer pattern
5 0 1 0 A ××, 5010B××
TBD
pF
pF
5010×N×, ×K× series
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
HIGH-level output voltage
L OW -level output voltage
Output leakage current
HIGH-level input voltage
L OW -level input voltage
V O H Q: Measurement cct 1, V D D = 4.5 V, IO H = 16 m A
V O L Q: Measurement cct 2, V D D = 4.5 V, IO L = 16 m A
IZ
Q: Measurement cct 2, INH = L OW , V DD = 5.5 V, VO H = V DD
Q: Measurement cct 2, INH = L OW , V DD = 5.5 V, VOL = V SS
VIH INH
VIL INH
5010×N 1
3.9 4.2
–V
– 0.3 0.4 V
– – 10
µA
– – 10
2.0 –
–V
– – 0.8 V
Current consumption
Measurement cct 3, load cct 2,
ID D I N H = open, CL = 50 p F, f = 30 M H z
5010×N 2
5010×N 3
5010×N 4
TBD mA
INH pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Measurement cct 3, load cct 1,
I N H = open, CL = 15 p F, f = 30 M H z
RUP1 Measurement cct 4
Rf Measurement cct 5
RD Design value
5010×K ×
5 0 1 0 B ××
– 100 – kΩ
– 200 – kΩ
– 820 – Ω
Built-in capacitance
CG
CD
Design value, determined by the internal
w afer pattern
5 0 1 0 A ××, 5010B××
TBD
pF
pF
NIPPON PRECISION CIRCUITS—5
5 Page 
SM5010 series
FUNCTIONAL DESCRIPTION
Standby Function
AH, AK, AN, BH, BK, BN, DN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
CL series
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version
AH, AK, AN, BH, BK,
BN, DN series
CL series
INH
HIGH (or open)
LOW
HIGH (or open)
LOW
Q
A n y fO , fO /2, fO /4 or fO /8 output frequency
High impedance
A n y fO , fO /2, fO /4 or fO /8 output frequency
High impedance
Oscillator
Normal operation
Normal operation
Normal operation
Stopped
Power-save Pull-up Resistance (CL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
NIPPON PRECISION CIRCUITS—11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SM5010BN2S.PDF ] | |
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