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PDF SI7450DP Data sheet ( Hoja de datos )
| Número de pieza | SI7450DP | |
| Descripción | N-Channel 200-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 200-V (D-S) MOSFET
Si7450DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.080 @ VGS = 10 V
0.090 @ VGS = 6 V
ID (A)
5.3
5.0
PowerPAKt SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
200
"20
5.3 3.2
4.3 2.6
40
15
4.3 1.6
5.2 1.9
3.3 1.2
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
www.vishay.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7450DP.PDF ] | |
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