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PDF SI7846DP-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI7846DP-T1 | |
| Descripción | N-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 150-V (D-S) MOSFET
Si7846DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
150 0.050 @ VGS = 10 V
ID (A)
6.7
PowerPAK SO-8
6.15 mm
D
8D
7D
6D
5
S
1S
5.15 mm
2S
3G
4
Bottom View
Ordering Information: Si7846DP-T1
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% Rg Tested
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
150
"20
6.7 4.0
5.4 3.3
50
25
4.3 1.6
5.2 1.9
3.3 1.2
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
www.vishay.com
1
1 page  
Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7846DP-T1.PDF ] | |
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