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PDF SI8402DB-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI8402DB-T1 | |
| Descripción | 20-V N-Channel 1.8-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si8402DB
Vishay Siliconix
20-V N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.037 @ VGS = 4.5 V
20 0.039 @ VGS = 2.5 V
0.043 @ VGS = 1.8 V
ID (A)
7.3
7.1
6.8
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
D PA, Battery and Load Switch for Portable Devices
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8402
xxx
S
4
G
1
D
Device Marking: 8402
xxx = Date/Lot Traceability Code
Ordering Information: Si8402DB-T1
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Package Reflow Conditionsb
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VPR
IR/Convection
ID
IDM
IS
PD
TJ, Tstg
7.3 5.3
5.9 4.3
30
2.3 1.2
2.77
1.47
1.77
0.94
−55 to 150
215
220
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
Symbol
RthJA
RthJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
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Si8402DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI8402DB-T1.PDF ] | |
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