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Datasheet SIDC85D170H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SIDC85D170H | Fast switching diode chip in EMCON 3 -Technology Preliminary
SIDC85D170H
Fast switching diode chip in EMCON 3 -Technology
FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient
A
This chip is used for: • EUPEC power modules
C
Applications: • resonant app |  Infineon Technologies AG | diode |
SID Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SID1003 | (SID300 / SID1003) 5phi Round Infrared LED
SID300/1003Series
5φ Round Infrared LED
SID300/1003 Series
External Dimensions
2.0min 5.6 (2.54) 24.0min
Anode
(Unit: mm)
8.5±0.5 A (0.8)
ø4.8±0.2
Directivity (Typical)
0.6±0.1
1.1max 0.85+0.1
0.6±0.1
Cathode
0° 30° 60° 30° 60°
60° 30°
0° 30° 60° 60° 30�  SANKEN led | | |
| 2 | SID1003BQ | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension  Sanken electric led | | |
| 3 | SID1010CM | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension Sanken electric led | | |
| 4 | SID1010CXM | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension Sanken electric led | | |
| 5 | SID1F10CM | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension Sanken electric led | | |
| 6 | SID1G10CM | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension Sanken electric led | | |
| 7 | SID1K10CM | Infrared LEDs Sanken electric led | | |
| 8 | SID1K10CXM | Infrared LEDs Infrared LEDs
sSID1010CXM series (Wide viewing angle)
Outline drawing A
Cathode
(P.2.54)
0.65max
0.5±0.1
0.5±0.1
Resin heap 1.5max
SID1010CXM
sSID1010CM series (Narrow viewing angle)
Outline drawing B
(1.0) 7.6±0.2
Cathode
(P.2.54)
±0.1
0.65max
0.5±0.1
SID1010CM sExternal dimension Sanken electric led | | |
| 9 | SID200N12 | NPT IGBT Modules SID200N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions
TC = 25oC, unless otherwise specified
Values 1200
Units V A A V
o
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION <
o
200(180) 400(  Sirectifier Semiconductors igbt | |
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