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Número de pieza SGA-7489
Descripción DC-3000 MHZ SILICON GERMANIUM
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Product Description
Stanford Microdevices’ SGA-7489 is a high performance
cascadeable 50-ohm amplifier designed for operation at 5
Volts DC. This RFIC uses the latest Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process
featuring 1 micron emitters with FT up to 50 GHz.
Preliminary
SGA-7489
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-7489 requires only DC blocking
and bypass capacitors and a bias inductor for external
components. Frequency performance may be extended using
the 2 GHz application circuit shown on sheet 5.
S21 vs. Frequency, T=+25C, Id=130 mA
25
20
Product Features
• DC-3000 MHz Operation
• Single Voltage Supply
• High Output Intercept: +36 dBm typ. at 850 MHz
• Low Noise Figure: 2.9 dB typ. at 850 MHz
15 Applications
10 • Oscillator Amplifiers
5 • PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
•0
0 500 1000 1500 2000 2500 3000 Drivers for CATV Amplifiers
Frequency (MHz)
• LO Driver Amplifier
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 130 mA, T = 25oC
P1dB
Output Power at 1dB Compression
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
Units
dBm
dBm
dBm
dBm
Min.
Typ.
22.8
22.6
22.4
20.3*
Max.
Notes
* Using
2 GHz
App.Ckt.
(sheet 5)
IP3
Third Order Intercept Point
Power out per tone = 0 dBm
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
dBm
dBm
dBm
dBm
38.6
37.2
36.0
35.7*
* Using
2 GHz
App.Ckt.
(sheet 5)
S21 Small Signal Gain
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
dB
dB
dB
dB
23.7
23.0
22.0
18.3*
* Using
2 GHz
App.Ckt.
(sheet 5)
Bandwidth
S11
S22
(Determined by S11, S22 Values)
Input Return Loss
Output Return Loss
S12 Reverse Isolation
f = DC-3000 MHz
f = DC-3000 MHz
f = 100 MHz
f = 500 MHz
f = 850 MHz
f = 1950 MHz *
MHz
dB
dB
dB
dB
dB
dB
3000
11.8
9.3
25.8
25.8
25.4
22.7*
* Using
2 GHz
App.Ckt.
(sheet 5)
NF Noise Figure, ZS = 50 Ohms
f = 850 MHz
dB
2.9
VD
Rth,j-l
Device Voltage
Thermal Resistance (junction - lead)
V
o C/W
5.0
82
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1 EDS-101801 Rev A

1 page




SGA-7489 pdf
RF input
2 GHz Application Ckt. Board
+Vcc
Ground
Rb1
Rb2
CM1 Cc1
IN
SGA-7489
Cd2
Cd1
Lb
CM2
Cc1
OUT
STANFORD MICRODEVICES
ECB-100607 Rev-A
SOT-89 Eval Board
+7V
Rb2
Rb1
Cd1
Z1
CM1
Cc1
Z2
SGA-7489
Z3
SGA-7489 2 GHz Application Circuit
PPrreelliimmiinnaarryy
SGA-7489 DC-3000 MHz 5V SiGe Amplifier
The SGA-7489 may be tuned in the manner
shown below for operation at 2 GHz.
Cd2
Lb
Cc2
CM2
Component Parts List
Component Value
Type
Manufacturer P/N
Cc1,Cc2,
Cd1
100 pF
ROHM
MCH185A101JK
CM1
1.2 pF
ROHM
MCH185A1R2JK
CM2
1.5 pF
ROHM
MCH185A1R5JK
Cd2 0.1 uF
ROHM
MCH182FN1042K
Lb
22 nH
TOKO
LL1608FS22NJ
Rb1,Rb2
30 Ohms, 1/4 ROHM
W
Type MRC 18
Table of Delay Elements
RF Output
Ref. Zo
Phase Delay @ 2 GHz
Desig. (Ohms) (Degrees)
Z1 50
Z2 50
Z3 50
14.5
34.1
21.5
Note: Separation Distance between via
holes on board represents approx. 5.4
Degrees phase shift @ 2GHz for equivalent
distance on microstrip.
Board material is GETEK,e=4.1
SGA-7489 2 GHz Tuned Application Ckt. Summary Data Table
Parameter
Typical
25oC
1700 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
18.6
3.1
36.1
20.8
10.0
23.8
1900 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
18.3
3.3
36.0
20.4
11.2
23.0
2100 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
18.2
3.7
34.5
19.9
16.3
22.1
726 Palomar Ave., Sunnyvale, CA 94085
Unit
dB
dB
dBm
dBm
dB
dB
Test Condition
(ID = 130 mA, unless otherwise noted)
ZS = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB
dB
dBm
dBm
dB
dB
ZS = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB
dB
dBm
dBm
dB
dB
ZS = 50 Ohms
Tone spacing = 1 MHz, Pout per tone = 0 dBm
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101801 Rev A

5 Page










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