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PDF SGM2013 Data sheet ( Hoja de datos )
| Número de pieza | SGM2013 | |
| Descripción | GaAs N-channel Dual-Gate MES FET | |
| Fabricantes | Sony Corporation | |
| Logotipo |  |
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SGM2013N
GaAs N-channel Dual-Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
M-281
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
6
• Gate 1 to source voltage
VG1S
–4
• Gate 2 to source voltage
VG2S
–4
• Drain current
ID 18
• Allowable power dissipation PD
100
• Channel temperature
Tch 125
• Storage temperature
Tstg –55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97144-PS
1 page  
Package Outline
Unit: mm
M-281
SGM2013N
2.0 ± 0.2
1.3
(0.65) (0.65)
32
41
+ 0.1
0.3 – 0.05
(0.65) (0.6)
1.25
+ 0.1
0.4 – 0.05
0.9 ± 0.1
0 ± 0.1
+ 0.1
0.1 – 0.01
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
SONY CODE
EIAJ CODE
JEDEC CODE
M-281
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
EPOXY RESIN
SOLDER PLATING
COPPER
0.1g
–5–
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SGM2013.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SGM2013 | GaAs N-channel Dual-Gate MES FET | Sony Corporation |
| SGM2013N | GaAs N-channel Dual-Gate MES FET | Sony Corporation |
| SGM2014 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
| SGM2014 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
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