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PDF SHF-0289 Data sheet ( Hoja de datos )
| Número de pieza | SHF-0289 | |
| Descripción | DC-3 GHz/ 1.0 Watt GaAs HFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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Product Description
Stanford Microdevices’ SHF-0289 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
SHF-0289
DC-3 GHz, 1.0 Watt
GaAs HFET
PPrreelilmimininaarryy
Output power at 1dB compression for the SHF-0289 is +30dBm
when biased for Class AB operation at 8V and 250mA. The
+46 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Adequate heat sinking must be provided for this part to avoid
exceeding the maximum junction temperature. Methods include
the use of screws near the device, and filled vias beneath the
part to the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.
Maximum Available Gain vs Frequency
Vds = 8V, Idq = 250mA
30
25
20
Product Features
• Patented GaAs Heterostructure FET
Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit)
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Frequency (GHz)
Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
Electrical Specifications at Ta = 25o C
Symbol
Parameters: Test Conditions
Units
Min.
Typ.
Max.
|S21| 2
Gmax
TOIP
Insertion Power Gain
Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms
Maximum Available Gain
Vds = 8.0V, I dq= 250mA, ZS=ZS OPT, ZL=ZL OPT
Output Third Order Intercept Point
(Device is tuned for maximum power output)
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
dB
dB
dBm
dBm
17.7
12.5
23
20
46
46
I Dss
Saturated Drain Current
Vds = 3.0V, Vgs= 0V
mA 650
Gm
Tranconductance:
Vds = 3.0V, Vgs = 0V
mS 375
Vp
Pinch-Off Voltage:
Vds = 2.0V, I d = 1.2mA
V -2.7 -1.9 -1.0
Vbgs Gate-to-Source Breakdown Voltage, Igs = 2.4mA
Vbgd Gate-to-Drain Breakdown Voltage, Igd = 2.4mA
Rth Thermal Resistance, junction-to-lead
V
V
oC/W
-22 -17
-22 -17
37
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1 EDS-101241 Rev A
1 page  
PPrreelilmimininaarryy
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
1.9 GHz Application Circuit at 25° C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
Ref. desig.
Cd1
Cd2,3,6,7,8
Cd9
Cd4
Cd10
Cd5
CM1
CM2
Lbias1
Lbias2
Rstab1
Rstab2
Value Part Number /Style
220 pF ROHM MCH18 series
33 pF ROHM MCH18 series
1000 pF ROHM MCH18 series
100 pF ROHM MCH18 series
0.1 uF TANTALUM, size"A", 35 volt
10 uF TANTALUM, size"A", 35 volt
2.7 pF ROHM MCH18 series
2.2 pF ROHM MCH18 series
10 nH TOKO LL1608-FH10NT
22 nH TOKO LL1608-FH22NT
5.1 ohms size 0603
20 ohms size 0603
Ref. desig. Value
Z1 50 ohms, 5.5 deg. @ 1900 MHz
Z2 50 ohms, 17.9 deg. @ 1900 MHz
Z3 50 ohms, 5.5 deg. @ 1900 MHz
Z4 50 ohms, 27 deg. @ 1900 MHz
Z5 50 ohms, 5.8 deg. @ 1900 MHz
Phase shift functional block between components
are calculated based on wavelength of 1900 MHz
signal on FR4 board material with dielectric con-
stant of 4.1, microstrip width and height dimen-
sions of W=.054 inch and h= .031 inch.
Test Data @ 1.9 GHz
P1dB(dBm) IP3(dBm) Output tone Level (dBm)
30.5 46.0
15
ς
Ω
Pout vs. Pin T=25οC
40
Drain Efficiency & IDvs. Pout T=25οC
60 510
30 4 0 4 3 0
20
10
0
5 10 15
Pin (dBm)
20
0 S11 & S22 vs. Frequency T=25oC
-5
-10
S22
-15
S11
-20
-25
-30
1.5 1.7 1.9 2.1 2.3
Frequency GHz
20
D ra in E ffic ie n c y
0
15 20 25
ID
30
350
270
35
Pout(dBm)
1 8 S21 & S12 vs. Frequency T=25oC
1 5 S21
1 2 S12
-26
-29
-32
9 -35
6
1 .5
1.7 1.9 2.1
Frequency GHz
-38
2 .3
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101241 Rev A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SHF-0289.PDF ] | |
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